r07ds1062ej0200 rev.2.00 page 1 of 6 apr 09, 2013 preliminary datasheet RJK0629DPN 60v, 85a, 4.5m ? max. n channel power mos fet high-speed switching use features ? v dss : 60 v ? r ds(on) : 4.5 m ? (max) ? i d : 85 a outline 1. gate 2. drain 3. source 4. drain (package name: to-220ab) 1 2 3 4 renesas package code: prss0004ac-a d g1 3 2, 4 s absolute maximum ratings (ta = 25 ? c) item symbol value unit drain to source voltage v dss 60 v gate to source voltage v gss ? 20 v drain current i d 85 a drain peak current i d (pulse) note 1 340 a body-drain diode reverse drain current i dr 85 a body-drain diode reverse drain peak current i dr (pulse) note 1 340 a avalanche current i ap note 2 55 a channel dissipation pch note 3 100 w channel to case thermal impedance ? ch-c 1.25 ?c/w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. tc = 25 ? c, tch ? 150 ? c, l = 100 ? h 3. value at tc = 25 ?c r07ds1062ej0200 (previous: rej03g1873-0100) rev.2.00 apr 09, 2013
RJK0629DPN preliminary r07ds1062ej0200 rev.2.00 page 2 of 6 apr 09, 2013 electrical characteristics (ta = 25 ? c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 100 ? a, v gs = 0 gate to source breakdown voltage v (br)gss ? 20 ? ? v i g = ? 100 ? a, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 60 v, v gs = 0 gate to source leak current i gss ? ? ? 10 ? a v gs = ? 20 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.0 v i d = 1 ma, v ds = 10 v static drain to source on state voltage v ds(on) ? 161 194 mv i d = 43a, v gs = 10 v note 4 ? 3.75 4.5 m ? i d = 43a, v gs = 10 v note 4 static drain to source on state resistance r ds(on) ? 4.9 6.6 m ? i d = 43 a, v gs = 4.5 v note 4 input capacitance ciss ? 4100 ? pf output capacitance coss ? 1000 ? pf reverse transfer capacitance crss ? 780 ? pf v ds = 10 v, v gs = 0 f = 1 mhz total gate charge qg ? 85 ? nc gate to source charge qgs ? 11 ? nc gate to drain charge qgd ? 25 ? nc v dd = 25 v, v gs = 10 v, i d = 85 a turn-on delay time t d(on) ? 20 ? ns rise time t r ? 40 ? ns turn-off delay time t d(off) ? 100 ? ns fall time t f ? 40 ? ns v dd = 30v, i d = 43a, v gs = 10 v, r g = 4.7 ?? body-drain diode forward voltage v df ? 0.92 1.2 v i f = 85 a, v gs = 0 note 4 body-drain diode reverse recovery time t rr ? 50 ? ns i f = 85 a, v gs = 0, di f /dt = 100 a/ ? s note: 4. pulse test
RJK0629DPN preliminary r07ds1062ej0200 rev.2.00 page 3 of 6 apr 09, 2013 main characteristics 100 80 60 40 20 0510 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics 11 0 10 1 drain current i d (a) drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. drain current 100 100 tc = 25c pulse test tc = 25c pulse test v gs = 4.5 v 10 v 0 15 10 5 0 gate to source voltage v gs (v) drain to source on state resistance r ds (on) (m) static drain to source on state resistance vs. gate to source voltage 20 8 412 16 20 200 150 100 50 0 50 100 150 200 power vs. temperature derating channel dissipation pch (w) case temperature tc (c) 0.01 100 10 0.1 1 0.1 1 10 100 1000 100 s 10 s 1 ms tc = 25c 1 shot pulse dc operation pw = 10 ms typical transfer characteristics drain current i d (a) gate to source voltage v gs (v) 100 10 1 0.1 0.01 0.001 0123 5 4 tc = 175c 25c ?40c v ds = 10 v pulse test tc = 175c 25c ?40c i d = 43 a pulse test v gs = 2.7 v 10 v 5 v 3 v operation in this area is limited by r ds(on)
RJK0629DPN preliminary r07ds1062ej0200 rev.2.00 page 4 of 6 apr 09, 2013 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) channel temperature tch ( c) avalanche energy e as (mj) maximum avalanche energy vs. channel temperature derating tc = 25c i d = 85 a v ds v gs v dd = 25 v 10 v 5 v v dd = 25 v 10 v 5 v 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 tc = 25c pulse test v gs = 0, ?5 v 10 v 500 400 300 200 100 25 50 75 100 125 175150 0 i ap = 55 a v dd = 25 v duty < 0.1 % rg 50 case temperature tc (c) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. temperature 20 16 ? 50 0 50 100 150 200 0 4 12 8 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage v gs = 4.5 v 10 v pulse test i d = 43 a 0 5 10 15 20 25 30 3000 10000 1000 300 100 tc = 25c v gs = 0 f = 1 mhz ciss coss crss
RJK0629DPN preliminary r07ds1062ej0200 rev.2.00 page 5 of 6 apr 09, 2013 pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) d. u. t rg i ap monitor v ds monitor v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e as = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 10 v r l v ds = 30 v vout monitor rg d = 1 0.05 10 100 1 m 10 m 100 m 10 1 10 1 0.1 0.01 0.1 0.2 0.5 0.01 1shot pulse 0.02 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 1.25c/w, tc = 25 c
RJK0629DPN preliminary r07ds1062ej0200 rev.2.00 page 6 of 6 apr 09, 2013 package dimensions 0.5 0.1 2.54 0.5 0.76 0.1 14.0 0.51 5 .0 0.3 2.79 0.2 18.5 0.5 7.8 0.5 10.16 0.2 2.54 0.5 1.26 0.15 4.44 0.2 2.7 max 1.5 max 11.5 max 9.5 8.0 1.27 6.4 +0.2 ? 0.1 3.6 +0.1 ? 0.08 previous code prss000 4ac-a to-220ab / to-220abv mass[typ.] 1.8g sc-46 renesas code jeita package code unit: mm package name to-220ab ordering information part no. quantity shipping container RJK0629DPN-00-t2 600 pcs box (tube)
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